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Creators/Authors contains: "McCluskey, Matthew D"

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  1. ; ; ; ; (, Journal of Vacuum Science & Technology B)
    Carbon is a common contaminant in oxide thin film semiconductors that can affect important properties such as the work function, surface chemistry, and electrical conductivity. In this work, carbon impurities in sputtered anatase titania (TiO2) and indium tin oxide (ITO) thin films were investigated using Raman and optical transmission spectroscopy. Annealing in a rough vacuum yielded carbon precipitates, which have characteristic disordered and graphitic carbon Raman signatures. Irradiation by a 532 nm laser in the ambient air was effective in removing the carbon precipitates; in the case of ITO, no trace of carbon could be observed in the Raman spectra following irradiation. The combination of vacuum annealing and laser irradiation could provide a practical means for reducing carbon impurities in thin films. 
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    Free, publicly-accessible full text available March 1, 2026
  2. ; ; ; ; ; (, Proc. SPIE)
    Teherani, Ferechteh H.; Rogers, David J. (Ed.)
    Full Text Available 
  3. ; ; ; ; ; (, Journal of Electronic Materials)
    Full Text Available 
  4. ; (, Journal of Applied Physics)
    null (Ed.)
    Full Text Available 
  5. ; ; ; ; (, Scientific Reports)
    null (Ed.)
    Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices. 
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  6. ; (, Journal of Applied Physics)
    Annealed bulk crystals of barium titanate (BaTiO3) exhibit persistent photoconductivity (PPC) at room temperature. Samples were annealed in a flowing gas of humid argon and hydrogen, with a higher flow rate corresponding to larger PPC. When exposed to sub-bandgap light, a broad infrared (IR) absorption peak appears at 5000 cm−1(2  μm), attributed to polaronic or free-carrier absorption from electrons in the conduction band. Along with the increased IR absorption, electrical resistance is reduced by a factor of approximately two. The threshold photon energy for PPC is 2.9 eV, similar to the case of SrTiO3. This similarity suggests that the mechanisms are similar: an electron in substitutional hydrogen (HO) is photoexcited into the conduction band, causing the proton to leave the oxygen vacancy and attach to a host oxygen atom. The barrier to recover to the ground state is large such that PPC persists at room temperature. 
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  7. ; ; ; ; (, Journal of Vacuum Science & Technology A)